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Merak3030Z
X-Ray Dynamic Flat Panel Detector
The Merak3030Z series is a high-performance, large-format IGZO flat panel detector designed to efficiently capture fine details and provide precise image information while ensuring low energy consumption. It also features performance optimization processing, ded image processing, 10G network image transmission, and redundant backup design, offering more convenient and reliable image processing and transmission methods. Due to its exceptional imaging capabilities, the Merak3030Z series is widely used in high-end medical imaging and other fields.
Product Features
148µm pixel size
2048×2048 pixel matrix
Applications
- Mobile C-arm
- DSA
- Other specialty CBCT
Specfication
Transducers
Type
IGZO (TFT)
Pixel size
148µm
Pixel matrix
2048×2048
Effective area
303.1×303.1mm²
Scintillator
Csl
Energy Range
40kV～125kV
Function
Acquisition mode
Continuous/Synchronous
Trig mode
Internal/External
ROI
Programmable size and location
Other
Power supply
DC24V±10%
Consumption
≤20W
Usage environment
+10ºC~+40ºC
Storage environment
-20ºC~+55ºC
Product Comparison
Comparison
| Model | Type | Pixel size | Pixel matrix | Effective area | Rate | Scintillator | Irradiation lifetime | Energy Range | Acquisition mode | Trig mode | ROI | Interface | Power supply | Consumption | Usage environment | Storage environment | Weight | External dimensions(W×L×H) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Merak1313 | CMOS | 100μm | 1280×1280 | 128×128 mm² | CsI | 40kV～120kV | 连续触发/触发模式 | 内触发/外触发 | 自定义任意尺寸 | RJ45 (以太网协议接口,GigE 1G) | DC12V±10% | ≤10W | +10ºC~+40ºC | -20ºC~+55ºC | |||||
| Merak1412 | CMOS | 100μm | 1404×1204 | 140.4×120.4mm² | CsI | 40kV～120kV | 连续触发/触发模式 | 内触发/外触发 | 自定义任意尺寸 | RJ45 (以太网协议接口,GigE 1G) | DC12V±10% | ≤10W | +10ºC~+40ºC | -20ºC~+55ºC | |||||
| Merak1215A | CMOS | 49.5μm | 2940×2342 | 115.9×145.5 mm² | CsI | 20kV～90kV | 连续触发/触发模式 | 内触发/外触发 | 自定义任意尺寸 | RJ45 (以太网协议接口,GigE 1G) | DC12V±10% | ≤6W | +10ºC~+40ºC | -20ºC~+55ºC | |||||
| Merak1613S | a-Si (TFT) | 125μm | 1274×1024 | 159.3×128 mm² | CsI | 40kV～125kV | 连续触发/触发模式 | 内触发/外触发 | 自定义任意尺寸 | RJ45 (以太网协议接口，GigE 1G) | DC24V±10% | ≤12W | +10ºC~+40ºC | -20ºC~+55ºC | |||||
| Merak1615 | CMOS | 100µm | 1600×1500 | 160×150mm² | CsI | 40kV～125kV | 连续触发/触发模式 | 内触发/外触发 | X×Y [X列数、Y行数，X、Y=2n，最小为16] | RJ45 (以太网协议接口，GigE 1G) | DC12V±10% | ≤10W | +10ºC~+40ºC | -20ºC~+55ºC | |||||
| Merak1917Z | IGZO (TFT) | 120µm | 1536×1386 | 184.3×166.3mm² | CsI | 40kV～125kV | 连续触发/触发模式 | 内触发/外触发 | 自定义任意尺寸 | RJ45（以太网协议接口，GigE 1G） | DC24V±10% | ≤10W | +10ºC~+40ºC | -20ºC~+55ºC | |||||
| Merak2121 | CMOS | 135µm | 1504×1560 | 203×211mm² | CsI | 40kV～125kV | 连续触发/触发模式 | 内触发/外触发 | 自定义任意尺寸 | RJ45（以太网协议接口，GigE 1G） | DC(12V~24V)±10% | ≤15W | +10ºC~+40ºC | -20ºC~+55ºC | |||||
| Merak3030 | CMOS | 100µm | 3240×3000 | 324×300mm² | CsI | 40kV～125kV | 连续触发/触发模式 | 内触发/外触发 | 自定义任意尺寸 | RJ45（以太网协议接口，GigE 10G） | DC24V±10% | ≤30W | +10ºC~+40ºC | -20ºC~+55ºC | |||||
| Merak3040 | CMOS | 100µm | 4320×3000 | 432×300mm² | CsI | 40kV～125kV | 连续模式/触发模式 | 内触发/外触发 | 自定义任意尺寸 | RJ45（以太网协议接口，GigE 10G） | DC24V±10% | TBD | +10ºC~+40ºC | -20ºC~+55ºC |