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Pheda0606A
X-Ray Dynamic Flat Panel Detector
Pheda0606A series X-ray dynamic flat detector is d on advanced CMOS imaging technology, with high-speed, high resolution
and low noise imaging characteristics. Its irradiation life is optimized for non-destructive testing scenarios and can be widely used in
electronic parts testing, micro CT, lithium battery testing, casting parts testing, automotive avionics manufacturing quality control and
other industrial non-destructive testing fields.
The detector is equipped with the GigE Vision, which makes it easier for users to obtain data.
and low noise imaging characteristics. Its irradiation life is optimized for non-destructive testing scenarios and can be widely used in
electronic parts testing, micro CT, lithium battery testing, casting parts testing, automotive avionics manufacturing quality control and
other industrial non-destructive testing fields.
The detector is equipped with the GigE Vision, which makes it easier for users to obtain data.
Product Features
49.5μm pixel size
1172×1260 pixel matrix
Long irradiation life(10 kGy)
Applications
- Electronic component inspection
- Micro CT
- Lithium battery inspection
- Casting inspection
- Automobile, spaceflight, electronic manufacturing quality control
Specfication
Transducers
Type
CMOS
Pixel size
49.5μm
Pixel matrix
1172×1260
Effective area
58.0×62.4 mm2
Scintillator
CsI
Irradiation lifetime
10kGy
Energy Range
40kV~160kV
Function
Acquisition mode
Continuous/Synchronous
Trig mode
Internal/External
ROI
Programmable size and location
Other
Interface
RJ45（Ethernet protocol interface）
Power supply
DC12V±10%
Consumption
≤4W
Usage environment
+10ºC~+40ºC
Storage environment
-20ºC~+55ºC
Product Comparison
Comparison
| Model | Type | Pixel size | Pixel matrix | Effective area | Rate | Scintillator | Irradiation lifetime | Energy Range | Acquisition mode | Trig mode | ROI | Interface | Power supply | Consumption | Usage environment | Storage environment | Weight | External dimensions(W×L×H) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Pheda3030 | CMOS | 100μm | 3000×3000 | 300×300mm² | CsI | 40kV～160kV | 连续触发/触发模式 | 内触发/外触发 | 自定义任意尺寸 | DC24V±10% | |||||||||
| Pheda1613D | a-Si(TFT) | 125μm | 1274×1024 | 160×128mm²（6×5in） | CsI | 20kGy | 40kV~230kV | 连续触发/触发模式 | 内触发/外触发 | 自定义任意尺寸 | RJ45 (以太网协议接口) | DC24V±10% | ≤12W | +5ºC~+35ºC | -20ºC~+60ºC | ||||
| Pheda1412-5G | CMOS | 100µm | 1404×1204 | 140.4×120.4mm² | CsI | 20kGy | 40kV～160kV | 连续触发/触发模式 | 内触发/外触发 | 自定义任意尺寸 | RJ45 (以太网协议接口) | DC12V±10% | ≤15W | +10ºC~+40ºC | -20ºC~+60ºC | ||||
| Pheda1512 | CMOS | 100µm | 1440×1120 | 144.0×112.0mm² | CsI/GOS | 20kGy | 40kV～160kV | 连续触发/触发模式 | 内触发/外触发 | 自定义任意尺寸 | RJ45 (以太网协议接口) | DC12V±10% | ≤10W | +10ºC~+40ºC | -20ºC~+60ºC | ||||
| Pheda1412 | CMOS | 100µm | 1404×1204 | 140.4×120.4mm² | CsI/GOS | 20kGy | 40kV～160kV | 连续触发/触发模式 | 内触发/外触发 | 自定义任意尺寸 | RJ45 (以太网协议接口) | DC12V±10% | ≤10W | +10ºC~+40ºC | -20ºC~+60ºC | ||||
| Pheda1313 | CMOS | 100µm | 1280×1280 | 128.0×128.0mm² | CsI/GOS | 20kGy | 40kV~160kV | 连续触发/触发模式 | 内触发/外触发 | 自定义任意尺寸 | RJ45 (以太网协议接口) | DC12V±10% | ≤10W | +10ºC~+40ºC | -20ºC~+60ºC | ||||
| Pheda1215A | CMOS | 49.5μm | 2940×2342 | 145.5×115.9 mm2 | CsI | 10kGy | 40kV~160kV | 连续触发/触发模式 | 内触发/外触发 | 自定义任意尺寸 | RJ45 (以太网协议接口) | DC12V±10% | ≤6W | +10ºC~+40ºC | -20ºC~+60ºC |