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Pheda1613D
X-Ray Dynamic Flat Panel Detector
Pheda1613D X-ray dynamic flat detector adopts advanced industrial technology, can be widely used in non-destructive testing, lithium battery detection and other industrial fields. The detector is equipped with the standard GigE Vision protocol, which makes it easier for users to obtain data. It uses the international advanced needle-like CsI scintillator to meet the needs of obtaining clearer images with the smallest radiation dose.
Product Features
125μm pixel size
1274×1024 pixel matrix
Long irradiation life(20kGy)
Applications
- Electronic component inspection
- Micro CT
- Lithium battery inspection
- Casting inspection
- Automobile, spaceflight, electronic manufacturing quality control
Specfication
Transducers
Type
a-Si(TFT)
Pixel size
125μm
Pixel matrix
1274×1024
Effective area
160×128mm²（6×5in）
Scintillator
CsI
Irradiation lifetime
20kGy
Energy Range
40kV~230kV
Function
Acquisition mode
Continuous/Synchronous
Trig mode
Internal/External
ROI
Programmable side and location
Other
Interface
RJ45（Ethernet protocol interface）
Power supply
DC24V±10%
Consumption
≤12W
Usage environment
+5ºC~+35ºC
Storage environment
-20ºC~+60ºC
Product Comparison
Comparison
| Model | Type | Pixel size | Pixel matrix | Effective area | Rate | Scintillator | Irradiation lifetime | Energy Range | Acquisition mode | Trig mode | ROI | Interface | Power supply | Consumption | Usage environment | Storage environment | Weight | External dimensions(W×L×H) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Pheda3030 | CMOS | 100μm | 3000×3000 | 300×300mm² | CsI | 40kV～160kV | 连续触发/触发模式 | 内触发/外触发 | 自定义任意尺寸 | DC24V±10% | |||||||||
| Pheda1412-5G | CMOS | 100µm | 1404×1204 | 140.4×120.4mm² | CsI | 20kGy | 40kV～160kV | 连续触发/触发模式 | 内触发/外触发 | 自定义任意尺寸 | RJ45 (以太网协议接口) | DC12V±10% | ≤15W | +10ºC~+40ºC | -20ºC~+60ºC | ||||
| Pheda1512 | CMOS | 100µm | 1440×1120 | 144.0×112.0mm² | CsI/GOS | 20kGy | 40kV～160kV | 连续触发/触发模式 | 内触发/外触发 | 自定义任意尺寸 | RJ45 (以太网协议接口) | DC12V±10% | ≤10W | +10ºC~+40ºC | -20ºC~+60ºC | ||||
| Pheda1412 | CMOS | 100µm | 1404×1204 | 140.4×120.4mm² | CsI/GOS | 20kGy | 40kV～160kV | 连续触发/触发模式 | 内触发/外触发 | 自定义任意尺寸 | RJ45 (以太网协议接口) | DC12V±10% | ≤10W | +10ºC~+40ºC | -20ºC~+60ºC | ||||
| Pheda0606A | CMOS | 49.5μm | 1172×1260 | 58.0×62.4 mm2 | CsI | 10kGy | 40kV~160kV | 连续触发/触发模式 | 内触发/外触发 | 自定义任意尺寸 | RJ45（以太网协议接口） | DC12V±10% | ≤4W | +10ºC~+40ºC | -20ºC~+55ºC | ||||
| Pheda1313 | CMOS | 100µm | 1280×1280 | 128.0×128.0mm² | CsI/GOS | 20kGy | 40kV~160kV | 连续触发/触发模式 | 内触发/外触发 | 自定义任意尺寸 | RJ45 (以太网协议接口) | DC12V±10% | ≤10W | +10ºC~+40ºC | -20ºC~+60ºC | ||||
| Pheda1215A | CMOS | 49.5μm | 2940×2342 | 145.5×115.9 mm2 | CsI | 10kGy | 40kV~160kV | 连续触发/触发模式 | 内触发/外触发 | 自定义任意尺寸 | RJ45 (以太网协议接口) | DC12V±10% | ≤6W | +10ºC~+40ºC | -20ºC~+60ºC |