Pheda1313
X-Ray Dynamic Flat Panel Detector
d on advanced CMOS imaging technology, Pheda1313 have high resolution and low noise with pixel size of 100μm. This series detectors can provide high quality imaging at low dose scenes with excellent sensitivity and signal-to-noise ratio.
They are suitable for a variety of industrial non-destructive testing applications, such as electronic parts testing, micro CT, lithium battery testing, casting parts testing, automotive, aerospace manufacturing quality control.
Product Features
100μm pixel size
1280×1280 pixel matrix
Long irradiation life(20kGy)
Applications
- Electronic component inspection
- Micro CT
- Lithium battery inspection
- Casting inspection
- Automobile, spaceflight, electronic manufacturing quality control
Electronic component inspection
Micro CT
Lithium battery inspection
Casting inspection
Automobile, spaceflight, electronic manufacturing quality control
Specfication
Transducers
Type
CMOS
Pixel size
100µm
Pixel matrix
1280×1280
Effective area
128.0×128.0mm²
Scintillator
CsI/GOS
Irradiation lifetime
20kGy
Energy Range
40kV~160kV
Function
Acquisition mode
Continuous/Synchronous
Trig mode
Internal/External
ROI
Programmable side and location
Other
Interface
RJ45(Ethernet protocol interface)
Power supply
DC12V±10%
Consumption
≤10W
Usage environment
+10ºC~+40ºC
Storage environment
-20ºC~+60ºC
Product Comparison
Comparison
Model Type Pixel size Pixel matrix Effective area Rate Scintillator Irradiation lifetime Energy Range Acquisition mode Trig mode ROI Interface Power supply Consumption Usage environment Storage environment Weight External dimensions(W×L×H)
Pheda3030 CMOS 100μm 3000×3000 300×300mm² CsI 40kV~160kV 连续触发/触发模式 内触发/外触发 自定义任意尺寸 DC24V±10%
Pheda1613D a-Si(TFT) 125μm 1274×1024 160×128mm²(6×5in) CsI 20kGy 40kV~230kV 连续触发/触发模式 内触发/外触发 自定义任意尺寸 RJ45 (以太网协议接口) DC24V±10% ≤12W +5ºC~+35ºC -20ºC~+60ºC
Pheda1412-5G CMOS 100µm 1404×1204 140.4×120.4mm² CsI 20kGy 40kV~160kV 连续触发/触发模式 内触发/外触发 自定义任意尺寸 RJ45 (以太网协议接口) DC12V±10% ≤15W +10ºC~+40ºC -20ºC~+60ºC
Pheda1512 CMOS 100µm 1440×1120 144.0×112.0mm² CsI/GOS 20kGy 40kV~160kV 连续触发/触发模式 内触发/外触发 自定义任意尺寸 RJ45 (以太网协议接口) DC12V±10% ≤10W +10ºC~+40ºC -20ºC~+60ºC
Pheda1412 CMOS 100µm 1404×1204 140.4×120.4mm² CsI/GOS 20kGy 40kV~160kV 连续触发/触发模式 内触发/外触发 自定义任意尺寸 RJ45 (以太网协议接口) DC12V±10% ≤10W +10ºC~+40ºC -20ºC~+60ºC
Pheda0606A CMOS 49.5μm 1172×1260 58.0×62.4 mm2 CsI 10kGy 40kV~160kV 连续触发/触发模式 内触发/外触发 自定义任意尺寸 RJ45(以太网协议接口) DC12V±10% ≤4W +10ºC~+40ºC -20ºC~+55ºC
Pheda1215A CMOS 49.5μm 2940×2342 145.5×115.9 mm2 CsI 10kGy 40kV~160kV 连续触发/触发模式 内触发/外触发 自定义任意尺寸 RJ45 (以太网协议接口) DC12V±10% ≤6W +10ºC~+40ºC -20ºC~+60ºC
Comparison
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